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Enhancement of spin-asymmetry by L21-ordering in Co2MnSi/Cr/Co2MnSi current-perpendicular-to-plane magnetoresistance devices.

Authors :
Sakuraba, Y.
Iwase, T.
Saito, K.
Mitani, S.
Takanashi, K.
Source :
Applied Physics Letters; 1/5/2009, Vol. 94 Issue 1, p012511, 3p, 1 Color Photograph, 3 Graphs
Publication Year :
2009

Abstract

Co<subscript>2</subscript>MnSi/Cr/Co<subscript>2</subscript>MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co<subscript>2</subscript>MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L2<subscript>1</subscript>-ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 mΩ μm<superscript>2</superscript> were achieved by annealing at 400 °C. These results indicate that promoting the degree of L2<subscript>1</subscript>-ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
94
Issue :
1
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
36178184
Full Text :
https://doi.org/10.1063/1.3068492