Back to Search Start Over

Uncooled (25–85°C) 10 Gbit/s operation of 1.3 µm-range metamorphic Fabry-Perot laser on GaAs substrate.

Authors :
Arai, M.
Tadokoro, T.
Fujisawa, T.
Kobayashi, W.
Nakashima, K.
Yuda, M.
Kondo, Y.
Source :
Electronics Letters (Institution of Engineering & Technology); 3/26/2009, Vol. 45 Issue 7, p359-360, 2p, 2 Diagrams, 2 Graphs
Publication Year :
2009

Abstract

The first direct modulation of a 1.3 µm-range metamorphic laser diode on a GaAs substrate has been realised. A 200 µm-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85°C, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85°C. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00135194
Volume :
45
Issue :
7
Database :
Complementary Index
Journal :
Electronics Letters (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
37190598
Full Text :
https://doi.org/10.1049/el.2009.0263