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Uncooled (25–85°C) 10 Gbit/s operation of 1.3 µm-range metamorphic Fabry-Perot laser on GaAs substrate.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 3/26/2009, Vol. 45 Issue 7, p359-360, 2p, 2 Diagrams, 2 Graphs
- Publication Year :
- 2009
-
Abstract
- The first direct modulation of a 1.3 µm-range metamorphic laser diode on a GaAs substrate has been realised. A 200 µm-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85°C, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85°C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 45
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 37190598
- Full Text :
- https://doi.org/10.1049/el.2009.0263