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Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures.
- Source :
- Applied Physics Letters; 4/6/2009, Vol. 94 Issue 14, p142104, 3p, 1 Diagram, 4 Graphs
- Publication Year :
- 2009
-
Abstract
- We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 94
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 37580345
- Full Text :
- https://doi.org/10.1063/1.3112602