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Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field.
- Source :
- Applied Physics Letters; 4/6/2009, Vol. 94 Issue 14, p142101, 3p, 1 Diagram, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO<subscript>2</subscript>/Si(100)/SiO<subscript>2</subscript> quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g<superscript>*</superscript>m<superscript>*</superscript> to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 94
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 37580358
- Full Text :
- https://doi.org/10.1063/1.3105987