Noise in Green Transistors (Small Slope Switches).

Small slope switches with very small subthreshold swings have been proposed recently to overcome the IC power problem. In the case of these new devices the source/drain current controlled by the gate is either due to avalanche breakdown (IMOS) or band-to-band tunneling (TFET). The impact of these new transport mechanisms on noise is investigated. The performance of the IMOS is not very promising. Its noise is by orders of magnitude too large due to the avalanche breakdown and it consumes too much power. In the case of the TFET the noise is similar to conventional MOSFETs, but the gate/drain correlation coefficient of noise is larger. [ABSTRACT FROM AUTHOR]