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Single-Chip Boost Converter Using Monolithically Integrated A1GaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT.
- Source :
- IEEE Electron Device Letters; May2009, Vol. 30 Issue 5, p430-432, 3p, 4 Diagrams, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field- effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AIGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 μm exhibits a breakdown voltage of 470 V, a turn-on voltage of 0.58 V, and a specific on-resistance of 2.04 mΩ cm². The L-FER exhibits no reverse recovery cur- rent associated with the turn-off transient because of its unipolar nature. A prototype of GaN-based boost converter that includes monolithically integrated rectifiers and transistors is demonstrated using conventional GaN-on-Si wafers for the first time to prove the feasibility of the GaN-based power IC technology. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 30
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 39452133
- Full Text :
- https://doi.org/10.1109/LED.2009.2015897