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Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer.
- Source :
- Journal of Applied Physics; May2009, Vol. 105 Issue 10, p103102-103106, 4p, 2 Diagrams, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm wavelength is compared for several Al composition in the AlGaN n-cladding layer. The Al composition has been varied from 2% to 6% to study the effect of n-cladding refractive index on threshold current and slope efficiency of the LDs. As the Al composition in the AlGaN n-cladding layer increases, both threshold current and slope efficiency decrease. This behavior can be explained by the change in optical field distribution with refractive index of the AlGaN n-cladding layer. It is found that the Al composition of ¿4% would be advantageous for achieving more than 100 mW output power and high level of catastrophic optical damage. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR lasers
REFRACTIVE index
GALLIUM
NITRIDES
INDIUM
ALUMINUM
QUANTUM wells
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 40418669
- Full Text :
- https://doi.org/10.1063/1.3126487