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A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes.
- Source :
- IEEE Journal of Quantum Electronics; May2009, Vol. 45 Issue 5, p566-571, 6p, 8 Graphs
- Publication Year :
- 2009
-
Abstract
- We study the breakdown characteristics and timing statistics of InP and In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As single-photon avalanche photodiodes (SPADs) with avalanche widths ranging from 0.2 to 1.0 κm at room temperature using a random ionization path-length model. Our results show that, for a given avalanche width, the breakdown probability of In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As SPADs increases faster with overbias than InP SPADs. When we compared their timing statistics, we observed that, for a given breakdown probability, InP requires a shorter time to reach breakdown and exhibits a smaller timing jitter than In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As. However, due to the lower dark count probability and faster rise in breakdown probability with overbias, In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As SPADs with avalanche widths ⩽ 0.5 μm are more suitable for single-photon detection at telecommunication wavelengths than InP SPADs. Moreover, we predict that, in InP SPADs with avalanche widths ⩽ 0.3 μm and In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As SPADs with avalanche widths ⩽ 0.2 μm, the dark count probability is higher than the photon count probability for all applied biases. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189197
- Volume :
- 45
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 41139904
- Full Text :
- https://doi.org/10.1109/JQE.2009.2013094