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Spatially confined nickel disilicide formation at 400 degree C on ion implantation....
- Source :
- Applied Physics Letters; 12/6/1993, Vol. 63 Issue 23, p3173, 3p, 3 Diagrams, 2 Graphs
- Publication Year :
- 1993
-
Abstract
- Investigates the localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon. Induction of the silicidation reaction by two stage thermal annealing; Parameters determining the characteristics of the silicide films; Determination of silicide resistivity.
- Subjects :
- SILICIDES
ION implantation
NICKEL
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 63
- Issue :
- 23
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4177633
- Full Text :
- https://doi.org/10.1063/1.110214