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Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy.
- Source :
- Applied Physics Letters; 6/29/2009, Vol. 94 Issue 26, p262503, 3p, 4 Graphs
- Publication Year :
- 2009
-
Abstract
- Electronic structures of La<subscript>2</subscript>NiMnO<subscript>6</subscript> epitaxial films are characterized using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy. X-ray absorption spectra reveal that the valence states of Ni<superscript>2+</superscript> and Mn<superscript>4+</superscript> are dominant. The electronic structure at the valence band maximum is mainly derived from the Mn 3d state. The conduction band minimum is composed mostly of the Mn 3d-O 2p hybridized state. The optical gap is estimated to be about 1.5 eV based on the optical conductivity derived from optical spectra. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 94
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 42961954
- Full Text :
- https://doi.org/10.1063/1.3159826