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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon.

Authors :
Lei, T.
Fanciulli, M.
Molnar, R.J.
Moustakas, T.D.
Graham, R.J.
Scanlon, J.
Source :
Applied Physics Letters; 8/19/1991, Vol. 59 Issue 8, p944, 3p, 6 Black and White Photographs, 2 Graphs
Publication Year :
1991

Abstract

Examines the epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy. Components of the deposition system; Discussion on the film two-step growth process; Influence of the buffer layer on the film growth.

Details

Language :
English
ISSN :
00036951
Volume :
59
Issue :
8
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4329189
Full Text :
https://doi.org/10.1063/1.106309