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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon.
- Source :
- Applied Physics Letters; 8/19/1991, Vol. 59 Issue 8, p944, 3p, 6 Black and White Photographs, 2 Graphs
- Publication Year :
- 1991
-
Abstract
- Examines the epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy. Components of the deposition system; Discussion on the film two-step growth process; Influence of the buffer layer on the film growth.
- Subjects :
- EPITAXY
THIN films
SPHALERITE
GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 59
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4329189
- Full Text :
- https://doi.org/10.1063/1.106309