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Strain relaxation and mosaic structure in relaxed SiGe layers.

Authors :
Mooney, P.M.
LeGoues, F.K.
Chu, J.O.
Nelson, S.F.
Source :
Applied Physics Letters; 6/28/1993, Vol. 62 Issue 26, p3464, 3p, 3 Graphs
Publication Year :
1993

Abstract

Examines strain relaxation and mosaic structure in relaxed silicon germanide (SiGe) alloy layers. Use of high-resolution x-ray diffraction in characterizing strained SiGe layers and superlattices; Determination of the importance of mosaic structure; Discussion on the effect of threading dislocations on the x-ray peak widths.

Details

Language :
English
ISSN :
00036951
Volume :
62
Issue :
26
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4329802
Full Text :
https://doi.org/10.1063/1.109021