Distribution of electronic states in amorphous Zn-P thin films on the basis of optical measurements.

Transmission and fundamental reflectivity studies, completed on amorphous Zn-P thin films, allowed us to obtain parameters describing the fundamental absorption edge, i.e., the optical pseudogap E_G, Urbach energy E_U and exponential edge parameter E_T. All these data, together with the results of earlier transport measurements, have been utilized in developing simple models of electronic structure (distribution of electronic states) for amorphous Zn-P thin films of two compositions, i.e., Zn₅₇P₄₃ (near stoichiometry of Zn₃P₂) and Zn₃₂P₆₈ (near stoichiometry of ZnP₂). [ABSTRACT FROM AUTHOR]