Transient enhanced diffusion of implanted boron in 4H-silicon carbide.

Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 °C is determined to 7x10[sup -12] cm[sup 2]/s, which is 160 times larger than the equilibrium B diffusivity given in the literature. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]