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Epitaxial NiMnSb films on GaAs(001).
- Source :
- Applied Physics Letters; 12/18/2000, Vol. 77 Issue 25
- Publication Year :
- 2000
-
Abstract
- We show the growth of epitaxial NiMnSb(001) thin films, a half-metallic ferromagnet, on GaAs(001) by molecular-beam epitaxy. The Sb content of the films strongly depends on the Sb flux. Sb-deficient films show a reduced magnetization and the formation of a Mn[sub 2]As interface layer. Stoichiometric films exhibit the bulk lattice constant, have a saturation magnetization close to the bulk value, and do not suffer from Mn[sub 2]As formation at the interface. They show in-plane uniaxial anisotropy with nearly square hysteresis loops along the easy axis, which points either along [110] or [11¯0] depending on the growth conditions. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN films
GALLIUM arsenide
MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 77
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4414217
- Full Text :
- https://doi.org/10.1063/1.1334356