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Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study.

Authors :
Chang, Y. D.
Chiu, A. P.
Pong, W. F.
Tsai, M.-H.
Chang, Y. K.
Chen, Y. Y.
Chiou, J. W.
Jan, C. J.
Tseng, P. K.
Wu, R. T.
Chung, S. C.
Tsang, K. L.
Lin, I. N.
Cheng, H. F.
Source :
Applied Physics Letters; 12/25/2000, Vol. 77 Issue 26
Publication Year :
2000

Abstract

X-ray absorption near-edge structure (XANES) measurements have been performed for nitrogen (N) containing diamond films with three different N concentrations at the C K-edge using the sample drain current mode. The C K-edge XANES spectra of these diamond films resemble that of the pure diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp[sup 2]- and sp[sup 3]-bond derived resonance features in the XANES spectra. The valence-band photoelectron spectra indicate that N atoms cause the broadening of the valence band σ- and π-bond features and the enhancement and reduction of the σ- and π-bond features, respectively. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
77
Issue :
26
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4414846
Full Text :
https://doi.org/10.1063/1.1334916