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Effect of electric field on negative linear expansion of ferroelectric-semiconductor TlGaSe2.
- Source :
- Journal of Applied Physics; Sep2009, Vol. 106 Issue 6, p063529-1-063529-4, 4p, 5 Graphs
- Publication Year :
- 2009
-
Abstract
- The effect of electric field on the thermal expansion of the TlGaSe<subscript>2</subscript> ferroelectric-semiconductor with a layer crystalline structure has been investigated. A strong transformation of negative linear expansion coefficient in the layer plane has been observed as a result of the applied electric field. It was concluded that internal electric fields created by local polarized states in the ferroelectric- semiconductor are responsible for a negative thermal expansion and its behavior under the electric field. Predominantly, the electrostriction effect is the driving mechanism of the lattice deformation of TlGaSe<subscript>2</subscript> crystals at low temperatures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 44387989
- Full Text :
- https://doi.org/10.1063/1.3223318