Back to Search
Start Over
Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress.
- Source :
- Applied Physics Letters; 9/28/2009, Vol. 95 Issue 13, p132101, 3p, 4 Graphs
- Publication Year :
- 2009
-
Abstract
- Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift (ΔV<subscript>T</subscript>) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced ΔV<subscript>T</subscript> is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the I<subscript>DS</subscript>-V<subscript>GS</subscript> curve with an insignificant change in the subthreshold slope, as well as the deformation of the C<subscript>G</subscript>-V<subscript>G</subscript> curves. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 95
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 44449183
- Full Text :
- https://doi.org/10.1063/1.3237169