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Folded-Accumulation LDMOST: New Power MOS Transistor With Very Low Specific On-Resistance.
- Source :
- IEEE Electron Device Letters; Dec2009, Vol. 30 Issue 12, p1329-1331, 3p
- Publication Year :
- 2009
-
Abstract
- A new lateral power MOSFET structure [folded-accumulation LDMOS (FALDMOS)] is proposed, in which the silicon-substrate surface is trenched to form a folded shape from the channel to the drain electrode and the gate is extended to the drain. The majority-carrier accumulation layer is formed as the device is in ON state due to the extended gate in the drift region whose concentration is higher than that in a conventional LDMOS at the same breakdown voltage (By), resulting from the additional electric-field modulation, and an extra majority carrier is introduced on the sidewall of the trench, which reduced the on-resistance of the drift region further. In addition, the channel density is doubled because of trenching the folded channel, which reduced the channel on-resistance. It indicates by simulation that the specific on-resistance of 4.6Ω · mm<superscript>2</superscript> with a BV of 27.4 V in FALDMOS is lower than that of the previously reported lowest one. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 30
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 47107193
- Full Text :
- https://doi.org/10.1109/LED.2009.2032338