Back to Search
Start Over
Development of Pt-based ohmic contact materials for p-type GaN.
- Source :
- Journal of Applied Physics; 3/1/2001, Vol. 89 Issue 5, p2826, 6p, 1 Black and White Photograph, 1 Chart, 8 Graphs
- Publication Year :
- 2001
-
Abstract
- The stabilities of the electrical properties and microstructures of Pt, PtAu, NiAu, and TaTi ohmic contacts after contact formation were studied. The Pt and PtAu contacts annealed in an O[sub 2] and N[sub 2] mixed gas ambient had the specific contact resistance (ρ[sub c]) of high-10[sup -3] Ω cm[sup 2] and strong adhesion to the GaN substrates. The NiAu contact annealed in the partial O[sub 2] ambient had poor adhesion to the GaN, although the ρ[sub c] value of low-10[sup -3] Ω cm[sup 2] was obtained. The TaTi contact had the lowest ρ[sub c] values of less than 10[sup -4] Ω cm[sup 2]. After contact formation, the Pt and NiAu ohmic contacts prepared by annealing in the partial O[sub 2] ambient showed the excellent electrical and microstructural stabilities during room temperature storage and current injection. However, the contact resistance of the TaTi contact prepared by annealing at 800 °C increased during room temperature storage, and the mechanical failure of the contact was also observed after injecting current as low as 4 kA/cm2. From the present experiments, it was concluded that the Pt and PtAu contacts were the most reliable ohmic contact materials for p-GaN among four contact metals. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- OHMIC contacts
MICROSTRUCTURE
GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 4712570
- Full Text :
- https://doi.org/10.1063/1.1344578