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Development of Pt-based ohmic contact materials for p-type GaN.

Authors :
Arai, T.
Sueyoshi, H.
Koide, Yasuo
Moriyama, M.
Murakami, Masanori
Source :
Journal of Applied Physics; 3/1/2001, Vol. 89 Issue 5, p2826, 6p, 1 Black and White Photograph, 1 Chart, 8 Graphs
Publication Year :
2001

Abstract

The stabilities of the electrical properties and microstructures of Pt, PtAu, NiAu, and TaTi ohmic contacts after contact formation were studied. The Pt and PtAu contacts annealed in an O[sub 2] and N[sub 2] mixed gas ambient had the specific contact resistance (ρ[sub c]) of high-10[sup -3] Ω cm[sup 2] and strong adhesion to the GaN substrates. The NiAu contact annealed in the partial O[sub 2] ambient had poor adhesion to the GaN, although the ρ[sub c] value of low-10[sup -3] Ω cm[sup 2] was obtained. The TaTi contact had the lowest ρ[sub c] values of less than 10[sup -4] Ω cm[sup 2]. After contact formation, the Pt and NiAu ohmic contacts prepared by annealing in the partial O[sub 2] ambient showed the excellent electrical and microstructural stabilities during room temperature storage and current injection. However, the contact resistance of the TaTi contact prepared by annealing at 800 °C increased during room temperature storage, and the mechanical failure of the contact was also observed after injecting current as low as 4 kA/cm2. From the present experiments, it was concluded that the Pt and PtAu contacts were the most reliable ohmic contact materials for p-GaN among four contact metals. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
89
Issue :
5
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
4712570
Full Text :
https://doi.org/10.1063/1.1344578