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Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires.
- Source :
- Journal of Applied Physics; Dec2009, Vol. 106 Issue 12, p123903-1-123903-4, 4p, 1 Diagram, 2 Graphs
- Publication Year :
- 2009
-
Abstract
- Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction. [ABSTRACT FROM AUTHOR]
- Subjects :
- ANISOTROPY
DILUTED magnetic semiconductors
NANOWIRES
MANGANESE
GERMANIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 47244309
- Full Text :
- https://doi.org/10.1063/1.3267047