Electrical characteristics of ZrO[sub x]N[sub y] prepared by NH[sub 3] annealing of ZrO[sub 2].

The electrical characteristics of ZrO[sub x]N[sub y] prepared by NH[sub 3] annealing of ZrO[sub 2] were investigated for use in metal–oxide–semiconductor gate dielectric applications. Compared with conventional ZrO[sub 2], ZrO[sub x]N[sub y] exhibits excellent electrical characteristics such as high accumulation capacitance, low leakage current density, and superior thermal stability. Based on high resolution transmission electron microscope analysis of both ZrO[sub 2] and ZrO[sub x]N[sub y] samples which had been annealed at 800 °C for 5 min, the ZrO[sub 2] exhibited a polycrystalline state but the ZrO[sub x]N[sub y] was amorphous in structure. In addition, the thickness of ZrO[sub x]N[sub y] was thinner than that of ZrO[sub 2]. The improvement in electrical characteristics can be explained by the better thermal stability and lower rate of oxidation of ZrO[sub x]N[sub y]. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]