Complementation SCR for RF IC ESD protection.

Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 µm RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance. [ABSTRACT FROM AUTHOR]