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Complementation SCR for RF IC ESD protection.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 2/4/2010, Vol. 46 Issue 3, p210-211, 2p, 2 Diagrams, 2 Charts, 1 Graph
- Publication Year :
- 2010
-
Abstract
- Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 µm RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 46
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 47898093
- Full Text :
- https://doi.org/10.1049/el.2010.2567