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Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films.
- Source :
- Applied Physics Letters; 2/1/2010, Vol. 96 Issue 5, p052503, 3p, 1 Chart, 2 Graphs
- Publication Year :
- 2010
-
Abstract
- Mn and Cr-doped In<subscript>2</subscript>O<subscript>3</subscript> films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In<subscript>2</subscript>O<subscript>3</subscript> films shows reversible behavior, which can be switched between “on” and “off” states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In<subscript>2</subscript>O<subscript>3</subscript> films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 μ<subscript>B</subscript>/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism. [ABSTRACT FROM AUTHOR]
- Subjects :
- MAGNETISM
FERROMAGNETISM
THIN films
SURFACES (Technology)
PULSED laser deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 96
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 47929102
- Full Text :
- https://doi.org/10.1063/1.3303986