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Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films.

Authors :
Feng-Xian Jiang
Xiao-Hong Xu
Jun Zhang
Xiao-Chen Fan
Hai-Shun Wu
Gehring, G. A.
Source :
Applied Physics Letters; 2/1/2010, Vol. 96 Issue 5, p052503, 3p, 1 Chart, 2 Graphs
Publication Year :
2010

Abstract

Mn and Cr-doped In<subscript>2</subscript>O<subscript>3</subscript> films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In<subscript>2</subscript>O<subscript>3</subscript> films shows reversible behavior, which can be switched between “on” and “off” states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In<subscript>2</subscript>O<subscript>3</subscript> films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 μ<subscript>B</subscript>/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
96
Issue :
5
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
47929102
Full Text :
https://doi.org/10.1063/1.3303986