Properties of Ga1-xMnxAs with high x (>0.1).

Authors :: Chiba, D.
Yu, K. M.
Walukiewicz, W.
Nishitani, Y.
Matsukura, F.
Ohno, H.
Source :: Journal of Applied Physics; Apr2008, Vol. 103 Issue 7, p07D136, 3p
Publication Year :: 2008
Abstract: We have investigated the magnetic and the crystalline properties of a set of Ga<subscript>1-x</subscript>Mn<subscript>x</subscript>As layers with high nominal Mn compositions (x=0.101–0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition x<subscript>eff</subscript> and the fraction of Mn atoms at various lattice sites. Here, x<subscript>eff</subscript> determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements. [ABSTRACT FROM AUTHOR]