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Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN.

Authors :
Chen, Jun
Zhang, Shuming
Zhang, Baoshun
Zhu, Jianjun
Feng, Gan
Duan, Lihong
Wang, Yutian
Yang, Hui
Zheng, Wenchen
Source :
Science in China. Series E: Technological Sciences; Dec2003, Vol. 46 Issue 6, p620-626, 7p
Publication Year :
2003

Abstract

The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al<subscript>2</subscript>O<subscript>3</subscript> has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10069321
Volume :
46
Issue :
6
Database :
Complementary Index
Journal :
Science in China. Series E: Technological Sciences
Publication Type :
Academic Journal
Accession number :
49465089
Full Text :
https://doi.org/10.1360/03ye0038