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Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO2) x (SiO2)1− x .
- Source :
- Science in China. Series E: Technological Sciences; Aug2009, Vol. 52 Issue 8, p2222-2226, 5p
- Publication Year :
- 2009
-
Abstract
- (ZrO<subscript>2</subscript>)<subscript> x </subscript>(SiO<subscript>2</subscript>)<subscript>1− x </subscript> (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800°C with RTA process in N<subscript>2</subscript> for 60 s. The XPS spectra indicated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800°C, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO<subscript>2</subscript> after annealing under the same condition, and SiO<subscript>2</subscript> was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO<subscript>2</subscript>)<subscript>0.7</subscript>(SiO<subscript>2</subscript>)<subscript>0.3</subscript>/(ZrO<subscript>2</subscript>)<subscript>0.5</subscript>(SiO<subscript>2</subscript>)<subscript>0.5</subscript>/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10069321
- Volume :
- 52
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Science in China. Series E: Technological Sciences
- Publication Type :
- Academic Journal
- Accession number :
- 49466001
- Full Text :
- https://doi.org/10.1007/s11431-009-0226-x