Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy.

Authors :: Kitada, Takahiro
Saeki, Tatsuya
Ohashi, Masanobu
Shimomura, Satoshi
Adachi, Akira
Okamoto, Yasunori
Sano, Naokatsu
Hiyamizu, Satoshi
Source :: Journal of Electronic Materials; Sep1998, Vol. 27 Issue 9, p1043-1046, 4p
Publication Year :: 1998
Abstract: Effectively atomically flat interfaces over a macroscopic area (“(411)A super-flat interfaces”) were successfully achieved in In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As/In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As quantum wells (QWs) grown on (411)A InP substrates by molecular beam epitaxy (MBE) at a substrate temperature of 570°C and V/III=6. Surface morphology of the In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As/In<subscript>0.52</subscript>Al<subscript>0.48</subscript>As QWs was smooth and featureless, while a rough surface of those simultaneously grown on a (100) InP substrate was observed. Photoluminescence (PL) linewidths at 4.2 K from the (411)A QWs with well width of 0.6–12 nm were 20–30 % narrower than those grown on a (100) InP substrate and also they are almost as narrow as each of split PL peaks for those of growth-interrupted QWs on a (100) InP substrate. In the case of the (411)A QWs, only one PL peak with very narrow linewidth was observed from each QW over a large distance (7 mm) on a wafer. [ABSTRACT FROM AUTHOR]

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