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Stress in (110)-textured phosphorus-doped polycrystalline diamond studied by Raman and cathodoluminescence spectroscopies.
- Source :
- Journal of Applied Physics; Jun2010, Vol. 107 Issue 10, p103531-103535, 4p, 1 Color Photograph, 1 Black and White Photograph, 2 Graphs
- Publication Year :
- 2010
-
Abstract
- In this work, we investigate the stress developed in phosphorus-doped layers grown on (110)-textured polycrystalline diamond templates. To that end, we follow the shifts of the diamond Raman diffusion and the exciton recombination energies by Raman and cathodoluminescence spectroscopies, respectively. With each approach, a high tensile strain of several gigapascal is evidenced. Moreover, Raman mapping performed in cross section shows (i) at the grain boundaries, a strain in tension that propagates along the growth direction from the template to the deposited layer and (ii) at the center of each grain, a tensile strain of the phosphorus-doped layer with respect to the underlying undoped grain. Concerning the second, we observe also an increase in strain effects at high phosphorus incorporation, together with a structural degradation. The possible origins of such high lattice deformation of phosphorus-doped layers are discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 107
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 51060770
- Full Text :
- https://doi.org/10.1063/1.3428452