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High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding.
- Source :
- Journal of Electronic Materials; Aug2010, Vol. 39 Issue 8, p1125-1132, 8p, 1 Black and White Photograph, 3 Diagrams, 1 Chart, 5 Graphs
- Publication Year :
- 2010
-
Abstract
- A device fabrication and measurement method utilizing a SiO<subscript>2</subscript>–SiO<subscript>2</subscript> covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffer from the side-effect of substrate conduction at high temperatures. The proposed method includes complete substrate removal, high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-film ErAs:InGaAlAs metal/semiconductor nanocomposite grown on a lattice-matched InP substrate by molecular beam epitaxy, was transferred onto a sapphire substrate using the oxide bonding technique at 300°C, and its original InP substrate, which is conductive at high temperatures, was removed. Electrical conductivities and Seebeck coefficients were measured from room temperature to 840 K for this material on both the InP and sapphire substrates, and the measurement results clearly show that the InP substrate effect was eliminated for the sample on the sapphire substrate. A strain experiment has been conducted to investigate the effect of strain on electrical conductivity. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 39
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 51952343
- Full Text :
- https://doi.org/10.1007/s11664-010-1258-5