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Long-wavelength InP-based quantum-dash lasers.
- Source :
- IEEE Photonics Technology Letters; Jun2002, Vol. 14 Issue 6, p735-737, 3p
- Publication Year :
- 2002
-
Abstract
- Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm2 were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80°C in pulsed mode and show a high T0 value of 84 K up to 35°C. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of Δλ/ΔT = 0.12 nm/K is as low as that caused by the refractive index change [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 10411135
- Volume :
- 14
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Photonics Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 52126912
- Full Text :
- https://doi.org/10.1109/LPT.2002.1003076