Long-wavelength InP-based quantum-dash lasers.

Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm2 were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80°C in pulsed mode and show a high T0 value of 84 K up to 35°C. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of Δλ/ΔT = 0.12 nm/K is as low as that caused by the refractive index change [ABSTRACT FROM PUBLISHER]