InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging.

Authors :: Djie, H. S.
Dimas, C. E.
Wang, D.-N.
Ooi, B.-S.
Hwang, J. C. M.
Dang, G. T.
Chang, W. H.
Source :: IEEE Sensors Journal; Feb2007, Vol. 7 Issue 2, p251-257, 7p
Publication Year :: 2007
Abstract: We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured [ABSTRACT FROM PUBLISHER]