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InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging.
- Source :
- IEEE Sensors Journal; Feb2007, Vol. 7 Issue 2, p251-257, 7p
- Publication Year :
- 2007
-
Abstract
- We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 1530437X
- Volume :
- 7
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Sensors Journal
- Publication Type :
- Academic Journal
- Accession number :
- 52149414
- Full Text :
- https://doi.org/10.1109/JSEN.2006.886884