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Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs.
- Source :
- IEEE Electron Device Letters; Jul2010, Vol. 31 Issue 7, p659-661, 3p
- Publication Year :
- 2010
-
Abstract
- Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The ON-resistance increase caused by current collapse phenomena is dramatically reduced by the single-gate-FP and dual-FP structures compared with the source-FP structure, because the gate-edge electric field was reduced by the gate-FP electrode. The dual-FP structure was slightly more effective to suppress the collapse phenomena than the single-gate-FP structure, because the two-step FP structure relaxes the electric-field concentration at the FP edge. These results show that the gate-edge peak strongly affects the ON-resistance modulation. Although the FP edge peak also causes the collapse phenomena, its influence is weak. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 31
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 52240781
- Full Text :
- https://doi.org/10.1109/LED.2010.2048741