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Transparent nano-floating gate memory on glass.
- Source :
- Nanotechnology; Aug2010, Vol. 21 Issue 33, p335201-335201, 1p
- Publication Year :
- 2010
-
Abstract
- We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of [?] 71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.92 cm2 V [?] 1 s [?] 1, about 104, and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention are characterized in this study. Our study suggests that our memory devices have great potential for realizing transparent systems-on-glass. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 21
- Issue :
- 33
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 52825404
- Full Text :
- https://doi.org/10.1088/0957-4484/21/33/335201