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Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films.
- Source :
- IEEE Transactions on Electron Devices; Aug2010, Vol. 57 Issue 8, p1801-1808, 8p
- Publication Year :
- 2010
-
Abstract
- The effects of vanadium doping on resistive switching (RS) characteristics and mechanisms of RF-sputtered SrZrO<subscript>3</subscript> (SZO)-based thin films are investigated in this paper. The physical and electrical properties of SZO-based thin films are modulated by vanadium doping due to the Zr<superscript>4+</superscript> ion replaced by V<superscript>5+</superscript>, further affecting the RS parameters of SZO-based thin films. The conduction mechanisms of SZO-based thin films are dominated by ohmic conduction (hoping conduction) and Frenkel--Poole emission for the low resistance state (LRS) and the high resistance state (HRS), respectively. The turn-on process might be attributed to the formation of conducting filaments consisting of oxygen vacancies with the effective barrier height (φ<subscript>B,eff</subscript>) in the range of 0.10-0.13 eV, whereas the turn-off process might result from thermally assisted oxidation of oxygen vacancies by the Joule heating effect. Furthermore, the introduction of the high valence cation (V<superscript>5+</superscript>) in a Zr<superscript>4+</superscript> site of SZO crystalline structure can suppress the formation of oxygen vacancies due to the charge neutrality restriction. Such suppression leads to the changes in the forming voltage, turn-on voltage, HRS resistance, dielectric constant, and φ<subscript>B,eff</subscript> with vanadium doping concentration up to 0.2 mol%, which is within the solid solubility limit based on our measured lattice constants and Vegard's law. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 52919495
- Full Text :
- https://doi.org/10.1109/TED.2010.2050837