Back to Search
Start Over
Stochastic simulation of photon propagation in Si for extreme-ultraviolet mask-defect inspection.
- Source :
- Applied Physics Letters; 8/9/2010, Vol. 97 Issue 6, p061108, 3p, 5 Graphs
- Publication Year :
- 2010
-
Abstract
- Extreme-ultraviolet (EUV) light is used to inspect the Si photomask by analyzing the reflective photons. We demonstrated the re-emitting EUV photons from the flat Si surface and a two-dimensional semicircular Si defect by using the Monte Carlo method with a Gaussian phase function, respectively. The results of a model based on the Feynman path integral matches those of the Monte Carlo method very well by multiplying a correction function. The intensity of re-emitting photons from the defect can offer enough signals at the angle intersecting the surface less than 20°. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 52929592
- Full Text :
- https://doi.org/10.1063/1.3478013