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Annealing induced anomalous electrical transport behavior in SnO2 thin films prepared by pulsed laser deposition.
- Source :
- Applied Physics Letters; 8/30/2010, Vol. 97 Issue 9, p092101, 3p, 3 Graphs
- Publication Year :
- 2010
-
Abstract
- SnO<subscript>2</subscript> thin films were deposited on quartz substrates by pulsed laser deposition and postannealed at different temperatures in oxygen ambience. X-ray diffraction, Hall measurement, and x-ray photoelectron spectroscopy were employed to investigate the properties of the annealed SnO<subscript>2</subscript> thin films. An anomalous electrical transport behavior as a function of the annealing temperature was observed. Both the growth of the crystal grain and oxygen vacancy density variation in the annealing process have been identified to be responsible for the transition of electrical transport properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 53421677
- Full Text :
- https://doi.org/10.1063/1.3481376