Magnetoconcentration effect in intrinsic graphene ribbons.

We consider transverse redistributions of the electrons and holes in intrinsic graphene ribbons under the influence of crossed electric and magnetic fields, i.e., the magnetoconcentration effect. The electron and hole transport is described from the Boltzmann kinetic equation assuming the local quasiequilibrium distributions of the carriers over energy states. The effective control of the carriers is achieved from deep depletion to accumulation modes depending on the properties of the ribbon edges, provided electron-hole recombination/generation rates at the edges are different from those inside the ribbon. The current-voltage characteristics reflect the behavior of the carrier redistributions across the ribbon. The obtained results suggest that interesting effects such as the population inversion in certain ranges of energies and the induced transparency are possible, which make them attractive for various optoelectronics applications in the terahertz spectral range. [ABSTRACT FROM AUTHOR]