Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors.

MLA

Von Hauff, Elizabeth, et al. “Detailed Investigation of the Conducting Channel in Poly(3-Hexylthiophene) Field Effect Transistors.” Journal of Applied Physics, vol. 108, no. 6, Oct. 2010, p. 063709. EBSCOhost, https://doi.org/10.1063/1.3488607.

APA

Von Hauff, E., Johnen, F., Tunc, A. V., Govor, L., & Parisi, J. (2010). Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors. Journal of Applied Physics, 108(6), 063709. https://doi.org/10.1063/1.3488607

Chicago

Von Hauff, Elizabeth, Fabian Johnen, Ali Veysel Tunc, Leonid Govor, and Jürgen Parisi. 2010. “Detailed Investigation of the Conducting Channel in Poly(3-Hexylthiophene) Field Effect Transistors.” Journal of Applied Physics 108 (6): 063709. doi:10.1063/1.3488607.