Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition.

Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [formula] direction. For heterostructures with a sheet electron density of 9×10¹² cm^-2 an electron mobility of 1500 cm²/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation. [ABSTRACT FROM AUTHOR]