A TiAl2O5 nanocrystal charge trap memory device.

A charge trapping memory device using Ti_0.2Al_0.8O_x film as charge trapping layer and amorphous Al₂O₃ as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl₂O₅ nanocrystals are precipitated from the phase separation of Ti_0.2Al_0.8O_x film annealed at 900 °C. A memory window of 2.3 V and a stored electron density of 1×10¹³/cm² were obtained. Good retention characteristics of the memory device at 80 °C were observed due to the deep charge trapping level as identified by the valence band offsets and electron energy loss spectrum measurements. [ABSTRACT FROM AUTHOR]