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A TiAl2O5 nanocrystal charge trap memory device.
- Source :
- Applied Physics Letters; 10/4/2010, Vol. 97 Issue 14, p143504, 3p
- Publication Year :
- 2010
-
Abstract
- A charge trapping memory device using Ti<subscript>0.2</subscript>Al<subscript>0.8</subscript>O<subscript>x</subscript> film as charge trapping layer and amorphous Al<subscript>2</subscript>O<subscript>3</subscript> as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl<subscript>2</subscript>O<subscript>5</subscript> nanocrystals are precipitated from the phase separation of Ti<subscript>0.2</subscript>Al<subscript>0.8</subscript>O<subscript>x</subscript> film annealed at 900 °C. A memory window of 2.3 V and a stored electron density of 1×10<superscript>13</superscript>/cm<superscript>2</superscript> were obtained. Good retention characteristics of the memory device at 80 °C were observed due to the deep charge trapping level as identified by the valence band offsets and electron energy loss spectrum measurements. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 54326503
- Full Text :
- https://doi.org/10.1063/1.3496437