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Blue-shift photoluminescence from porous InAlAs.
- Source :
- Semiconductor Science & Technology; Nov2010, Vol. 25 Issue 11, p115006-115006, 1p
- Publication Year :
- 2010
-
Abstract
- A porous InAlAs structure was first obtained by electrochemical etching. Nano-pore arrays were formed when the In0.52Al0.48As membrane was anodized at constant voltages in an HF aqueous solution. These self-assembled structures showed evident blue-shift photoluminescence emissions. While a quantum size effect alone underestimates the blue-shift energy for a sample with a relatively large average pore wall thickness, a novel effect caused by the asymmetric etching is proposed to account for this phenomenon. The results inferred from the x-ray double crystal diffraction are in good agreement with the experimental data. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 25
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 54368082
- Full Text :
- https://doi.org/10.1088/0268-1242/25/11/115006