Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures.

Authors :: Bhat, Thirumaleshwara N.
Roul, Basanta
Rajpalke, Mohana K.
Kumar, Mahesh
Krupanidhi, S. B.
Sinha, Neeraj
Source :: Applied Physics Letters; 11/15/2010, Vol. 97 Issue 20, p202107, 3p
Publication Year :: 2010
Abstract: The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These dots were found to be single crystalline and grown along [001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be ΔE<subscript>C</subscript>=1.8 eV and ΔE<subscript>V</subscript>=1.3 eV and are in close agreement with Anderson's model. [ABSTRACT FROM AUTHOR]

Subjects :: TRANSPORT theory
TEMPERATURE effect
NITRIDES
QUANTUM dots
SILICON
HETEROJUNCTIONS
CRYSTAL growth
ELECTRIC capacity

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