Back to Search
Start Over
Reply to Comments on “1.88-\m\Omega \cdot \cm^2 1650-V Normally on 4H-SiC TI-VJFET”.
- Source :
- IEEE Transactions on Electron Devices; 12/01/2010, Vol. 57 Issue 12, p3543-3547, 5p
- Publication Year :
- 2010
-
Abstract
- The arguments presented in the above comments are refuted. The following are pointed out: 1) Veliadis' papers did not include the vertical-junction field-effect transistor (VJFET) dimensions required for readers to make technical analysis and comparison. 2) The current through the gate p-n junction of a VJFET is also affected by the ohmic contact and metal spreading resistance; therefore, the external gate terminal voltage alone does not determine whether a VJFET is operated in bipolar mode or not. 3) A longer vertical channel with a more invariant or uniform vertical-channel opening makes it much easier to realize higher performance and higher voltage normally-off JFETs because of the lower channel resistance and the larger drain voltage needed to punch through the drain-to-source barrier. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 57
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 55353772
- Full Text :
- https://doi.org/10.1109/TED.2010.2079190