Reply to Comments on “1.88-\m\Omega \cdot \cm^2 1650-V Normally on 4H-SiC TI-VJFET”.

The arguments presented in the above comments are refuted. The following are pointed out: 1) Veliadis' papers did not include the vertical-junction field-effect transistor (VJFET) dimensions required for readers to make technical analysis and comparison. 2) The current through the gate p-n junction of a VJFET is also affected by the ohmic contact and metal spreading resistance; therefore, the external gate terminal voltage alone does not determine whether a VJFET is operated in bipolar mode or not. 3) A longer vertical channel with a more invariant or uniform vertical-channel opening makes it much easier to realize higher performance and higher voltage normally-off JFETs because of the lower channel resistance and the larger drain voltage needed to punch through the drain-to-source barrier. [ABSTRACT FROM AUTHOR]