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Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition.
- Source :
- Journal of Applied Physics; Dec2001, Vol. 90 Issue 11, p5642, 5p, 3 Black and White Photographs, 2 Diagrams, 1 Chart, 4 Graphs
- Publication Year :
- 2001
-
Abstract
- Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells were investigated by using photoluminescence, transmission electron microscopy, optical microscopy, and high resolution x-ray diffraction. The In[sub x]Ga[sub 1-x]N/GaN (x>0.2) quantum wells used in this study were grown on c-plane sapphire by using metalorganic chemical vapor deposition. The interruption was carried out by closing the group-III metalorganic sources before and after the growths of the InGaN quantum well layers. The transmission electron microscopy images show that with increasing interruption time, the quantum-dot-like regions and well thickness decreased due to indium reevaporation or the thermal etching effect. As a result the photoluminescence peak position was blueshifted and the intensity was reduced. Temperature- and excitation-power-dependent photoluminescence spectra support the results of transmission electron microscopy measurements. The sizes and the number of V defects did not differ with the interruption time. The interruption time is not directly related to the formation of defects. The V defect originates at threading dislocations and inversion domain boundaries due to higher misfit strain. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- QUANTUM wells
MICROSCOPY
OPTICAL properties
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 90
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 5549760
- Full Text :
- https://doi.org/10.1063/1.1410320