Back to Search
Start Over
Tunneling characteristics of graphene.
- Source :
- Applied Physics Letters; 12/20/2010, Vol. 97 Issue 25, p252102, 3p, 3 Graphs
- Publication Year :
- 2010
-
Abstract
- Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high E-field, and the latter is due to the appearance of a tunneling barrier in graphene channel induced by a structural transformation from crystalline graphene to disordered graphene because of the breakdown. Using Raman spectroscopy and imaging, the presence of nonuniform disordered graphene is confirmed. A memory switching effect of 100 000% ON/OFF ratio is demonstrated in the tunneling regime, which can be employed in various applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 56601026
- Full Text :
- https://doi.org/10.1063/1.3527979