Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes.

The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 µm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 µm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers. © 2001 American Institute of Physics. [DOI: 10.1063/1.1424061]. [ABSTRACT FROM AUTHOR]