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Ambipolar bistable switching effect of graphene.

Authors :
Shin, Young Jun
Kwon, Jae Hyun
Kalon, Gopinadhan
Lam, Kai-Tak
Bhatia, Charanjit S.
Liang, Gengchiau
Yang, Hyunsoo
Source :
Applied Physics Letters; 12/27/2010, Vol. 97 Issue 26, p262105, 3p
Publication Year :
2010

Abstract

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the on/off ratio of graphene resistive switching are suggested. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
97
Issue :
26
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
56910510
Full Text :
https://doi.org/10.1063/1.3532849