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Ambipolar bistable switching effect of graphene.
- Source :
- Applied Physics Letters; 12/27/2010, Vol. 97 Issue 26, p262105, 3p
- Publication Year :
- 2010
-
Abstract
- Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the on/off ratio of graphene resistive switching are suggested. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 97
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 56910510
- Full Text :
- https://doi.org/10.1063/1.3532849