CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique.

A new three-pulse CV measurement technique has been developed to investigate the trapping and detrapping of negative and positive charges in SiO₂/LaLuO₃ gate dielectric stacks on p-type silicon. Two types of negative and positive trapped charges have been observed in these devices which are deemed to be related to electron and hole trapping, respectively. The technique has the advantage that trapping and detrapping of both types of charges can be measured independently. The concentrations of trapped charge types, their release times, and their relationship with measurement parameters such as pulse charging/discharging time and pulse amplitude have been investigated. A logarithmic universal relationship was found between the flat-band voltage shifts due to detrapping of positive charges with the discharging time. [ABSTRACT FROM AUTHOR]