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Effect of Te inclusions in CdZnTe crystals at different temperatures.
- Source :
- Journal of Applied Physics; Feb2011, Vol. 109 Issue 4, p044504, 4p, 2 Diagrams, 2 Graphs
- Publication Year :
- 2011
-
Abstract
- CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature. [ABSTRACT FROM AUTHOR]
- Subjects :
- CRYSTALS
CADMIUM compounds
TELLURIUM compounds
LOW temperatures
ZIRCONIUM compounds
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 109
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 58700704
- Full Text :
- https://doi.org/10.1063/1.3549236